SIHH125N60EF-T1GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 23A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 4.62 EUR |
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Technische Details SIHH125N60EF-T1GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 23A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V.
Weitere Produktangebote SIHH125N60EF-T1GE3 nach Preis ab 4.62 EUR bis 10.03 EUR
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SIHH125N60EF-T1GE3 | Hersteller : Vishay / Siliconix |
MOSFETs PWRPK 600V 23A N-CH MOSFET |
auf Bestellung 2726 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHH125N60EF-T1GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 23A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHH125N60EF-T1GE3 | Hersteller : Vishay |
Power MOSFET With Fast Body Diode |
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| SIHH125N60EF-T1GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 156W Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: SMD Case: PowerPAK® 8x8L Drain-source voltage: 600V Drain current: 14A On-state resistance: 0.125Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHH125N60EF-T1GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 156W Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: SMD Case: PowerPAK® 8x8L Drain-source voltage: 600V Drain current: 14A On-state resistance: 0.125Ω |
Produkt ist nicht verfügbar |