SIHH14N60E-T1-GE3 Vishay Semiconductors
auf Bestellung 1498 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 8.53 EUR |
| 10+ | 7.15 EUR |
| 25+ | 6.73 EUR |
| 100+ | 5.77 EUR |
| 250+ | 5.46 EUR |
| 500+ | 5.15 EUR |
| 1000+ | 4.39 EUR |
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Technische Details SIHH14N60E-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 16A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 255mOhm @ 7A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1416 pF @ 100 V.
Weitere Produktangebote SIHH14N60E-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHH14N60E-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 16A PPAK 8 X 8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 255mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1416 pF @ 100 V |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHH14N60E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 16A 4-Pin PowerPAK EP T/R |
Produkt ist nicht verfügbar |
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| SIHH14N60E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 38A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 38A Power dissipation: 147W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 255mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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SIHH14N60E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 16A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 255mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1416 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHH14N60E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 38A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 38A Power dissipation: 147W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 255mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |