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SIHH186N60EF-T1GE3

SIHH186N60EF-T1GE3 Vishay Siliconix

sihh186n60ef.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 16A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.88 EUR
Mindestbestellmenge: 3000
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Technische Details SIHH186N60EF-T1GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 16A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V.

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SIHH186N60EF-T1GE3 SIHH186N60EF-T1GE3 Hersteller : Vishay Siliconix sihh186n60ef.pdf Description: MOSFET N-CH 600V 16A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.96 EUR
10+ 6.69 EUR
100+ 5.41 EUR
500+ 4.81 EUR
1000+ 4.12 EUR
Mindestbestellmenge: 3
SIHH186N60EF-T1GE3 SIHH186N60EF-T1GE3 Hersteller : Vishay / Siliconix sihh186n60ef.pdf MOSFET N-CHANNEL 600V
auf Bestellung 2845 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+11.67 EUR
10+ 9.83 EUR
25+ 9.33 EUR
100+ 7.96 EUR
250+ 7.51 EUR
500+ 7.07 EUR
1000+ 6.06 EUR
Mindestbestellmenge: 5
SIHH186N60EF-T1GE3 Hersteller : Vishay sihh186n60ef.pdf Power MOSFET With Fast Body Diode
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