SiHH20N50E-T1-GE3 Vishay / Siliconix
auf Bestellung 2747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.72 EUR |
| 10+ | 6.69 EUR |
| 100+ | 5.42 EUR |
| 500+ | 4.56 EUR |
| 1000+ | 4.38 EUR |
| 3000+ | 3.98 EUR |
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Technische Details SiHH20N50E-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 22A PPAK 8 X 8, Packaging: Tube, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 147mOhm @ 10A, 10V, Power Dissipation (Max): 174W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2063 pF @ 100 V.
Weitere Produktangebote SiHH20N50E-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHH20N50E-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 22A 4-Pin PowerPAK EP |
Produkt ist nicht verfügbar |
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| SiHH20N50E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SiHH20N50E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 22A PPAK 8 X 8 Packaging: Tube Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 147mOhm @ 10A, 10V Power Dissipation (Max): 174W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2063 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SiHH20N50E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |