SIHH21N65EF-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 650V 19.8A PPAK 8X8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2396 pF @ 100 V
auf Bestellung 675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.35 EUR |
| 10+ | 8.69 EUR |
| 100+ | 7.03 EUR |
| 500+ | 6.25 EUR |
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Technische Details SIHH21N65EF-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 650V 19.8A PPAK 8X8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2396 pF @ 100 V.
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SIHH21N65EF-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 650V 19.8A PPAK 8X8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2396 pF @ 100 V |
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