SIHH21N65EF-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 650V 19.8A PPAK 8X8, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 2396 pF @ 100 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).