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SIHH240N60E-T1-GE3

SIHH240N60E-T1-GE3 Vishay Siliconix

sihh240n60e.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 2336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+3.14 EUR
100+2.57 EUR
500+2.39 EUR
Mindestbestellmenge: 5
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Technische Details SIHH240N60E-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 12A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V.

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SIHH240N60E-T1-GE3 SIHH240N60E-T1-GE3 Hersteller : Vishay / Siliconix sihh240n60e.pdf MOSFETs PWRPK 600V 12A N-CH MOSFET
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
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1+4.59 EUR
10+3.40 EUR
25+3.38 EUR
100+2.73 EUR
250+2.71 EUR
500+2.39 EUR
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SIHH240N60E-T1-GE3 Hersteller : Vishay sihh240n60e.pdf Trans MOSFET N-CH 600V 12A 4-Pin PowerPAK EP T/R
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SIHH240N60E-T1-GE3 SIHH240N60E-T1-GE3 Hersteller : Vishay Siliconix sihh240n60e.pdf Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH