Produkte > VISHAY / SILICONIX > SIHH240N60E-T1-GE3
SIHH240N60E-T1-GE3

SIHH240N60E-T1-GE3 Vishay / Siliconix


sihh240n60e.pdf Hersteller: Vishay / Siliconix
MOSFET 600V N-CHANNEL
auf Bestellung 2690 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.89 EUR
10+ 3.33 EUR
25+ 3.27 EUR
100+ 3.01 EUR
250+ 2.96 EUR
500+ 2.68 EUR
1000+ 2.31 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHH240N60E-T1-GE3 Vishay / Siliconix

Description: MOSFET N-CH 600V 12A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V.

Weitere Produktangebote SIHH240N60E-T1-GE3 nach Preis ab 2.3 EUR bis 4.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIHH240N60E-T1-GE3 SIHH240N60E-T1-GE3 Hersteller : Vishay Siliconix sihh240n60e.pdf Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 2786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.45 EUR
10+ 3.73 EUR
100+ 3.02 EUR
500+ 2.68 EUR
1000+ 2.3 EUR
Mindestbestellmenge: 4
SIHH240N60E-T1-GE3 SIHH240N60E-T1-GE3 Hersteller : Vishay Siliconix sihh240n60e.pdf Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Produkt ist nicht verfügbar