SIHH27N60EF-T1-GE3 Vishay / Siliconix
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.26 EUR |
| 10+ | 8.82 EUR |
| 25+ | 8.54 EUR |
| 100+ | 6.83 EUR |
| 250+ | 6.78 EUR |
| 500+ | 6.20 EUR |
| 6000+ | 6.12 EUR |
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Technische Details SIHH27N60EF-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 29A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V, Power Dissipation (Max): 202W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 100 V.
Weitere Produktangebote SIHH27N60EF-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHH27N60EF-T1-GE3 | Hersteller : Vishay |
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| SIHH27N60EF-T1-GE3 | Hersteller : VISHAY |
SIHH27N60EF-T1-GE3 SMD N channel transistors |
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SIHH27N60EF-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 29A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 100 V |
Produkt ist nicht verfügbar |
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SIHH27N60EF-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 29A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 100 V |
Produkt ist nicht verfügbar |