SIHJ10N60E-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 10A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 100 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.83 EUR |
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Technische Details SIHJ10N60E-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 10A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 100 V.
Weitere Produktangebote SIHJ10N60E-T1-GE3 nach Preis ab 2.16 EUR bis 5.03 EUR
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SIHJ10N60E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 10A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 100 V |
auf Bestellung 12969 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHJ10N60E-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs PowerPAK SO-8L |
auf Bestellung 13265 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHJ10N60E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 10A 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHJ10N60E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 89W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 89W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 313mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHJ10N60E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 89W; PowerPAK® SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 89W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 313mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |