SIHK045N60EF-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 1.57 EUR |
| 10+ | 1.4 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.71 EUR |
| 3000+ | 0.63 EUR |
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Technische Details SIHK045N60EF-T1-GE3 Vishay Semiconductors
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V.
Weitere Produktangebote SIHK045N60EF-T1-GE3 nach Preis ab 7.04 EUR bis 17.56 EUR
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SIHK045N60EF-T1GE3 | Vishay Semiconductors |
 MOSFETs TOLL 600V 47A E SERIES |
auf Bestellung 5379 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK045N60EF-T1GE3 | Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V |
auf Bestellung 1783 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHK045N60EF-T1GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs TOLL 600V 47A E SERIES
MOSFETs TOLL 600V 47A E SERIES
auf Bestellung 5379 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.31 EUR |
| 10+ | 9.79 EUR |
| 100+ | 8.06 EUR |
| 500+ | 7.32 EUR |
| 2000+ | 7.04 EUR |
| SIHK045N60EF-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 17A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 100 V
auf Bestellung 1783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.56 EUR |
| 10+ | 12.14 EUR |
| 100+ | 9.51 EUR |