SIHK065N60E-T1-GE3 Vishay Siliconix

Description: E SERIES POWER MOSFET POWERPAK 1, Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerBSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK®10 x 12, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 192W (Tc).