SIHK100N65E-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHK100N65E-T1-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V, Power Dissipation (Max): 184W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V.
Weitere Produktangebote SIHK100N65E-T1-GE3 nach Preis ab 8.79 EUR bis 18.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHK100N65E-T1-GE3 | Vishay Siliconix |
Description: E SERIES POWER MOSFET 650 V (D-Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
SIHK100N65E-T1-GE3 | Vishay |
MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V |
auf Bestellung 1705 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHK100N65E-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.65 EUR |
| 10+ | 12.1 EUR |
| 25+ | 11.21 EUR |
| 100+ | 10.25 EUR |
| 250+ | 9.78 EUR |
| 500+ | 9.5 EUR |
| 1000+ | 9.27 EUR |
| SIHK100N65E-T1-GE3 |
![]() |
Hersteller: Vishay
MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V
MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V
auf Bestellung 1705 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.02 EUR |
| 10+ | 12.35 EUR |
| 100+ | 9.28 EUR |
| 1000+ | 8.79 EUR |


