auf Bestellung 5190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.98 EUR |
| 10+ | 6.58 EUR |
| 100+ | 4.8 EUR |
| 1000+ | 4.47 EUR |
| 2000+ | 4.33 EUR |
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Technische Details SIHK105N60EF-T1GE3 Vishay
Description: E SERIES POWER MOSFET POWERPAK 1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V.
Weitere Produktangebote SIHK105N60EF-T1GE3 nach Preis ab 4.35 EUR bis 10.88 EUR
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SIHK105N60EF-T1GE3 | Hersteller : Vishay Semiconductors |
 MOSFETs PWRPK 600V 24A N-CH MOSFET |
auf Bestellung 5345 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK105N60EF-T1GE3 | Hersteller : Vishay Siliconix |
Description: E SERIES POWER MOSFET POWERPAK 1 Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK105N60EF-T1GE3 | Hersteller : Vishay Siliconix |
Description: E SERIES POWER MOSFET POWERPAK 1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V |
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