| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.46 EUR |
| 10+ | 8.4 EUR |
| 100+ | 6.07 EUR |
| 500+ | 5.71 EUR |
| 1000+ | 5.34 EUR |
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Technische Details SIHK105N60EF-T1GE3 Vishay
Description: E SERIES POWER MOSFET POWERPAK 1, Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK®10 x 12, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 142W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerBSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIHK105N60EF-T1GE3 nach Preis ab 5.06 EUR bis 12.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SIHK105N60EF-T1GE3 | Vishay Siliconix |
 Description: E SERIES POWER MOSFET POWERPAK 1Supplier Device Package: PowerPAK®10 x 12 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| SIHK105N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 24A; 142W Mounting: SMD Power dissipation: 142W Gate charge: 51nC Drain current: 24A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V On-state resistance: 0.105Ω |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SIHK105N60EF-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: E SERIES POWER MOSFET POWERPAK 1
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.71 EUR |
| 10+ | 8.54 EUR |
| 100+ | 6.18 EUR |
| 500+ | 5.81 EUR |
| SIHK105N60EF-T1GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 24A; 142W
Mounting: SMD
Power dissipation: 142W
Gate charge: 51nC
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 0.105Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 24A; 142W
Mounting: SMD
Power dissipation: 142W
Gate charge: 51nC
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
On-state resistance: 0.105Ω
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 5.06 EUR |