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SIHK105N60EF-T1GE3

SIHK105N60EF-T1GE3 Vishay


sihk105n60ef.pdf Hersteller: Vishay
MOSFETs PWRPK 600V 24A N-CH MOSFET
auf Bestellung 5195 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.24 EUR
10+6.9 EUR
100+5.02 EUR
1000+4.75 EUR
2000+4.52 EUR
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Technische Details SIHK105N60EF-T1GE3 Vishay

Description: E SERIES POWER MOSFET POWERPAK 1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V.

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SIHK105N60EF-T1GE3 SIHK105N60EF-T1GE3 Hersteller : Vishay Semiconductors sihk105n60ef.pdf MOSFETs PWRPK 600V 24A N-CH MOSFET
auf Bestellung 5345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10 EUR
10+6.86 EUR
100+5.05 EUR
500+4.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHK105N60EF-T1GE3 SIHK105N60EF-T1GE3 Hersteller : Vishay Siliconix sihk105n60ef.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.88 EUR
10+7.32 EUR
100+5.3 EUR
500+4.44 EUR
1000+4.35 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHK105N60EF-T1GE3 SIHK105N60EF-T1GE3 Hersteller : Vishay Siliconix sihk105n60ef.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
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Im Einkaufswagen  Stück im Wert von  UAH