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SIHK105N60EF-T1GE3

SIHK105N60EF-T1GE3 Vishay Siliconix

sihk105n60ef.pdf Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.99 EUR
10+ 7.55 EUR
100+ 6.1 EUR
500+ 5.43 EUR
1000+ 4.65 EUR
Mindestbestellmenge: 2
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Technische Details SIHK105N60EF-T1GE3 Vishay Siliconix

Description: E SERIES POWER MOSFET POWERPAK 1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V.

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SIHK105N60EF-T1GE3 SIHK105N60EF-T1GE3 Hersteller : Vishay Semiconductors sihk105n60ef.pdf MOSFET EF SERIES PWR MOSFET
auf Bestellung 5625 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.05 EUR
10+ 7.6 EUR
25+ 7.18 EUR
100+ 6.16 EUR
250+ 5.81 EUR
500+ 5.47 EUR
1000+ 5.07 EUR
SIHK105N60EF-T1GE3 SIHK105N60EF-T1GE3 Hersteller : Vishay Siliconix sihk105n60ef.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2301 pF @ 100 V
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