SIHK125N60EF-T1-GE3 Vishay Semiconductors
Hersteller: Vishay Semiconductors
MOSFET N-Channel 40 V (D-S) MOSFET PowerPAK SO-8L, 2.3 mO a. 10V, 3.35 mO a. 4.5V
| Anzahl | Preis |
|---|---|
| 1+ | 3.2 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.57 EUR |
| 3000+ | 1.4 EUR |
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Technische Details SIHK125N60EF-T1-GE3 Vishay Semiconductors
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V.
Weitere Produktangebote SIHK125N60EF-T1-GE3 nach Preis ab 3.63 EUR bis 9.82 EUR
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SIHK125N60EF-T1GE3 | Vishay Semiconductors |
 MOSFETs PWRPK 600V 21A N-CH MOSFET |
auf Bestellung 1375 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHK125N60EF-T1GE3 | Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V |
auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHK125N60EF-T1GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs PWRPK 600V 21A N-CH MOSFET
MOSFETs PWRPK 600V 21A N-CH MOSFET
auf Bestellung 1375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.64 EUR |
| 10+ | 6.39 EUR |
| 100+ | 4.66 EUR |
| 500+ | 4.22 EUR |
| 1000+ | 3.96 EUR |
| 2000+ | 3.63 EUR |
| SIHK125N60EF-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.82 EUR |
| 10+ | 6.58 EUR |
| 100+ | 4.75 EUR |
| 500+ | 4.4 EUR |