SIHK125N60EF-T1-GE3 Vishay Semiconductors
Hersteller: Vishay Semiconductors
MOSFET N-Channel 40 V (D-S) MOSFET PowerPAK SO-8L, 2.3 mO a. 10V, 3.35 mO a. 4.5V
MOSFET N-Channel 40 V (D-S) MOSFET PowerPAK SO-8L, 2.3 mO a. 10V, 3.35 mO a. 4.5V
auf Bestellung 18050 Stücke:
Lieferzeit 379-393 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 4.73 EUR |
| 13+ | 4.26 EUR |
| 100+ | 3.43 EUR |
| 500+ | 2.81 EUR |
| 1000+ | 2.32 EUR |
| 3000+ | 2.07 EUR |
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Technische Details SIHK125N60EF-T1-GE3 Vishay Semiconductors
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V.
Weitere Produktangebote SIHK125N60EF-T1-GE3 nach Preis ab 6.6 EUR bis 12.77 EUR
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SIHK125N60EF-T1GE3 | Hersteller : Vishay Siliconix |
 Description: E SERIES POWER MOSFET WITH FASTPackaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHK125N60EF-T1GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CHANNEL 600V MOSFET |
auf Bestellung 1900 Stücke: Lieferzeit 221-235 Tag (e) |
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| SIHK125N60EF-T1GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 21A 9-Pin(8+Tab) PowerPAK T/R |
Produkt ist nicht verfügbar |
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| SIHK125N60EF-T1GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 54A; 132W Type of transistor: N-MOSFET Power dissipation: 132W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 54A Mounting: SMD Drain-source voltage: 600V Drain current: 21A On-state resistance: 0.125Ω Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SIHK125N60EF-T1GE3 | Hersteller : Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1863 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHK125N60EF-T1GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 54A; 132W Type of transistor: N-MOSFET Power dissipation: 132W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 54A Mounting: SMD Drain-source voltage: 600V Drain current: 21A On-state resistance: 0.125Ω |
Produkt ist nicht verfügbar |