Produkte > VISHAY / SILICONIX > SIHK155N60EF-T1GE3
SIHK155N60EF-T1GE3

SIHK155N60EF-T1GE3 Vishay / Siliconix

sihk155n60ef.pdf Hersteller: Vishay / Siliconix
MOSFET EF Series Power MOSFET With Fast Body Diode PowerPAK 10 x 12, 155 mohm a. 10V
auf Bestellung 3950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.54 EUR
10+ 7.16 EUR
25+ 6.76 EUR
100+ 5.79 EUR
250+ 5.47 EUR
500+ 5.16 EUR
1000+ 4.4 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHK155N60EF-T1GE3 Vishay / Siliconix

Description: EF SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V.

Weitere Produktangebote SIHK155N60EF-T1GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIHK155N60EF-T1GE3 SIHK155N60EF-T1GE3 Hersteller : Vishay Siliconix sihk155n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
Produkt ist nicht verfügbar
SIHK155N60EF-T1GE3 SIHK155N60EF-T1GE3 Hersteller : Vishay Siliconix sihk155n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
Produkt ist nicht verfügbar