SIHK155N60EF-T1GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHK155N60EF-T1GE3 Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V.
Weitere Produktangebote SIHK155N60EF-T1GE3 nach Preis ab 3.76 EUR bis 12.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHK155N60EF-T1GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 600V |
auf Bestellung 3362 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SIHK155N60EF-T1GE3 | Vishay Siliconix |
Description: EF SERIES POWER MOSFET WITH FAST Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| SIHK155N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 600V; 18A; 156W Polarisation: N Type of transistor: N-MOSFET Gate charge: 38nC Drain current: 18A Gate-source voltage: 20V Power dissipation: 156W Drain-source voltage: 600V Kind of channel: enhancement Mounting: SMD |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SIHK155N60EF-T1GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 600V
MOSFETs N-CHANNEL 600V
auf Bestellung 3362 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.91 EUR |
| 10+ | 8.02 EUR |
| 100+ | 5.78 EUR |
| 500+ | 5.38 EUR |
| 1000+ | 5.19 EUR |
| 2000+ | 5.09 EUR |
| SIHK155N60EF-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.15 EUR |
| 10+ | 8.16 EUR |
| 100+ | 5.89 EUR |
| 500+ | 5.47 EUR |
| SIHK155N60EF-T1GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 18A; 156W
Polarisation: N
Type of transistor: N-MOSFET
Gate charge: 38nC
Drain current: 18A
Gate-source voltage: 20V
Power dissipation: 156W
Drain-source voltage: 600V
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 18A; 156W
Polarisation: N
Type of transistor: N-MOSFET
Gate charge: 38nC
Drain current: 18A
Gate-source voltage: 20V
Power dissipation: 156W
Drain-source voltage: 600V
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 3.76 EUR |