| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.16 EUR |
| 10+ | 5.32 EUR |
| 100+ | 4.84 EUR |
| 500+ | 4.38 EUR |
| 1000+ | 4.13 EUR |
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Technische Details SIHK185N60E-T1-GE3 Vishay
Description: E SERIES POWER MOSFET POWERPAK 1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V.
Weitere Produktangebote SIHK185N60E-T1-GE3 nach Preis ab 4.14 EUR bis 10.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SIHK185N60E-T1-GE3 | Vishay Siliconix |
 Description: E SERIES POWER MOSFET POWERPAK 1Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V |
auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHK185N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 600V; 19A; 114W Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 19A Power dissipation: 114W Mounting: SMD Gate charge: 33nC Kind of channel: enhancement Gate-source voltage: ±30V |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIHK185N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Description: E SERIES POWER MOSFET POWERPAK 1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.5 EUR |
| 10+ | 6.99 EUR |
| 50+ | 5.47 EUR |
| 100+ | 5 EUR |
| 500+ | 4.14 EUR |
| SIHK185N60E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 19A; 114W
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 19A
Power dissipation: 114W
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 19A; 114W
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 19A
Power dissipation: 114W
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)