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SIHK185N60E-T1-GE3

SIHK185N60E-T1-GE3 Vishay Siliconix

sihk185n60e.pdf
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
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Technische Details SIHK185N60E-T1-GE3 Vishay Siliconix

Description: E SERIES POWER MOSFET POWERPAK 1, Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK®10 x 12, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 114W (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerBSFN, Packaging: Tape & Reel (TR).

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SIHK185N60E-T1-GE3 SIHK185N60E-T1-GE3 Vishay Siliconix sihk185n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHK185N60E-T1-GE3 Vishay sihk185n60e.pdf MOSFETs PWRPK 600V 19A E SERIES
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHK185N60E-T1-GE3 sihk185n60e.pdf
SIHK185N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHK185N60E-T1-GE3 sihk185n60e.pdf
Hersteller: Vishay
MOSFETs PWRPK 600V 19A E SERIES
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH