| Anzahl | Preis |
|---|---|
| 1+ | 22.02 EUR |
| 10+ | 17.93 EUR |
| 100+ | 13.06 EUR |
| 480+ | 13.04 EUR |
| 960+ | 12.62 EUR |
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Technische Details SIHL023N60E-GE3 Vishay Semiconductors
Description: N-CHANNEL 600V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 96A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 38A, 10V, Power Dissipation (Max): 521W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AD-4L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10291 pF @ 100 V.
Weitere Produktangebote SIHL023N60E-GE3 nach Preis ab 10.75 EUR bis 22.53 EUR
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SIHL023N60E-GE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL 600VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 38A, 10V Power Dissipation (Max): 521W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AD-4L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10291 pF @ 100 V |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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