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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.82 EUR |
| 10+ | 6.65 EUR |
| 100+ | 5.39 EUR |
| 500+ | 4.24 EUR |
| 1000+ | 4.07 EUR |
| 2500+ | 3.98 EUR |
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Technische Details SIHL080N65SF-GE3 Vishay Semiconductors
Description: N-CHANNEL 600V, Packaging: Tape & Reel (TR), Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 22A, 10V, Power Dissipation (Max): 403W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AD-4L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 100 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHL080N65SF-GE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL 600VPackaging: Tape & Reel (TR) Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 22A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AD-4L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 100 V |
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