SIHL620S-GE3 Vishay Siliconix

Description: LOGIC MOSFET N-CHANNEL 200V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).