SIHL630STRL-GE3 Vishay Semiconductors
auf Bestellung 35 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 3.02 EUR |
| 21+ | 2.49 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.49 EUR |
| 800+ | 1.26 EUR |
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Technische Details SIHL630STRL-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W, Mounting: SMD, Case: D2PAK; TO263, Kind of package: reel; tape, Power dissipation: 74W, On-state resistance: 0.5Ω, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 40nC, Kind of channel: enhanced, Gate-source voltage: ±10V, Pulsed drain current: 36A, Drain-source voltage: 200V, Drain current: 5.7A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHL630STRL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIHL630STRL-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 74W On-state resistance: 0.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 36A Drain-source voltage: 200V Drain current: 5.7A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHL630STRL-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK |
Produkt ist nicht verfügbar |
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| SIHL630STRL-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 74W On-state resistance: 0.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 36A Drain-source voltage: 200V Drain current: 5.7A |
Produkt ist nicht verfügbar |