SIHLZ44S-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W
Case: D2PAK; TO263
Mounting: SMD
On-state resistance: 39mΩ
Kind of package: tube
Power dissipation: 150W
Drain current: 36A
Gate charge: 66nC
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±10V
Type of transistor: N-MOSFET
Pulsed drain current: 200A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W
Case: D2PAK; TO263
Mounting: SMD
On-state resistance: 39mΩ
Kind of package: tube
Power dissipation: 150W
Drain current: 36A
Gate charge: 66nC
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±10V
Type of transistor: N-MOSFET
Pulsed drain current: 200A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHLZ44S-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W, Case: D2PAK; TO263, Mounting: SMD, On-state resistance: 39mΩ, Kind of package: tube, Power dissipation: 150W, Drain current: 36A, Gate charge: 66nC, Drain-source voltage: 60V, Kind of channel: enhanced, Gate-source voltage: ±10V, Type of transistor: N-MOSFET, Pulsed drain current: 200A, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHLZ44S-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SIHLZ44S-GE3 | Hersteller : Vishay / Siliconix | MOSFET |
Produkt ist nicht verfügbar |
||
SIHLZ44S-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W Case: D2PAK; TO263 Mounting: SMD On-state resistance: 39mΩ Kind of package: tube Power dissipation: 150W Drain current: 36A Gate charge: 66nC Drain-source voltage: 60V Kind of channel: enhanced Gate-source voltage: ±10V Type of transistor: N-MOSFET Pulsed drain current: 200A Polarisation: unipolar |
Produkt ist nicht verfügbar |