SIHP050N60E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
auf Bestellung 916 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.72 EUR |
| 10+ | 8.76 EUR |
| 100+ | 7.34 EUR |
| 500+ | 7.20 EUR |
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Technische Details SIHP050N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 51A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V.
Weitere Produktangebote SIHP050N60E-GE3 nach Preis ab 8.08 EUR bis 13.75 EUR
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SIHP050N60E-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 650V Vds 30V Vgs TO-220AB |
auf Bestellung 592 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP050N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SIHP050N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Pulsed drain current: 155A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHP050N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Pulsed drain current: 155A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |