| Anzahl | Privatkunde |
|---|---|
| 15+ | 11.85 EUR |
| 16+ | 11.19 EUR |
| 25+ | 10.4 EUR |
| 100+ | 9.48 EUR |
| 250+ | 8.89 EUR |
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Technische Details SIHP050N60E-GE3 Vishay
Description: MOSFET N-CH 600V 51A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V.
Weitere Produktangebote SIHP050N60E-GE3 nach Preis ab 9.64 EUR bis 19.81 EUR
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SIHP050N60E-GE3 | Vishay |
 Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 459 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP050N60E-GE3 | Vishay / Siliconix |
MOSFETs 650V Vds 30V Vgs TO-220AB |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP050N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 51A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHP050N60E-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-220AB
auf Bestellung 459 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 11.85 EUR |
| 16+ | 11.44 EUR |
| 25+ | 10.79 EUR |
| 100+ | 10.02 EUR |
| 250+ | 9.64 EUR |
| SIHP050N60E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs TO-220AB
MOSFETs 650V Vds 30V Vgs TO-220AB
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.43 EUR |
| 10+ | 13.39 EUR |
| 100+ | 9.97 EUR |
| 500+ | 9.72 EUR |
| SIHP050N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
Description: MOSFET N-CH 600V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.81 EUR |
| 10+ | 13.64 EUR |