SIHP052N60EF-GE3 Vishay / Siliconix
auf Bestellung 1001 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 13.99 EUR |
| 10+ | 12.92 EUR |
| 25+ | 11.6 EUR |
| 100+ | 10.3 EUR |
| 250+ | 10.09 EUR |
| 500+ | 9.36 EUR |
| 1000+ | 8.84 EUR |
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Technische Details SIHP052N60EF-GE3 Vishay / Siliconix
Description: MOSFET EF SERIES TO-220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V.
Weitere Produktangebote SIHP052N60EF-GE3 nach Preis ab 9.7 EUR bis 16.07 EUR
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SIHP052N60EF-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET EF SERIES TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V |
auf Bestellung 992 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIHP052N60EF-GE3 | Hersteller : Vishay |
Power MOSFET |
Produkt ist nicht verfügbar |
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| SIHP052N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 148A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 101nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHP052N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 148A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 101nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |