SIHP074N65E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 6.18 EUR |
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Technische Details SIHP074N65E-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V, Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V.
Weitere Produktangebote SIHP074N65E-GE3 nach Preis ab 6.95 EUR bis 14.20 EUR
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SIHP074N65E-GE3 | Hersteller : Vishay Siliconix |
Description: E SERIES POWER MOSFET TO-220AB, Packaging: Cut Tape (CT) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP074N65E-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs E Series Power MOSFET TO-220AB, 79 mohm a. 10V |
auf Bestellung 1921 Stücke: Lieferzeit 10-14 Tag (e) |
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