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SIHP074N65E-GE3

SIHP074N65E-GE3 Vishay Siliconix


sihp074n65e.pdf Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
auf Bestellung 1000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+6.18 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIHP074N65E-GE3 Vishay Siliconix

Description: E SERIES POWER MOSFET TO-220AB,, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V, Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V.

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SIHP074N65E-GE3 SIHP074N65E-GE3 Hersteller : Vishay Siliconix sihp074n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.27 EUR
10+9.39 EUR
100+7.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHP074N65E-GE3 SIHP074N65E-GE3 Hersteller : Vishay / Siliconix sihp074n65e.pdf MOSFETs E Series Power MOSFET TO-220AB, 79 mohm a. 10V
auf Bestellung 1921 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.97 EUR
10+9.75 EUR
100+7.32 EUR
250+7.30 EUR
500+6.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH