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SIHP100N60E-GE3

SIHP100N60E-GE3 VISHAY


sihp100n60e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 73A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 182 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.43 EUR
25+3.99 EUR
Mindestbestellmenge: 17
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Technische Details SIHP100N60E-GE3 VISHAY

Description: MOSFET N-CH 600V 30A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V.

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SIHP100N60E-GE3 SIHP100N60E-GE3 Hersteller : Vishay Siliconix sihp100n60e.pdf Description: MOSFET N-CH 600V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
auf Bestellung 3892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
50+3.36 EUR
100+3.06 EUR
500+2.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHP100N60E-GE3 SIHP100N60E-GE3 Hersteller : Vishay Semiconductors sihp100n60e.pdf MOSFETs 650V Vds; 30V Vgs TO-220AB
auf Bestellung 13986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.25 EUR
10+4.29 EUR
100+3.92 EUR
500+3.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH