SIHP100N60E-GE3 VISHAY
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 73A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 17+ | 4.43 EUR |
| 25+ | 3.99 EUR |
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Technische Details SIHP100N60E-GE3 VISHAY
Description: MOSFET N-CH 600V 30A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V.
Weitere Produktangebote SIHP100N60E-GE3 nach Preis ab 2.8 EUR bis 8.25 EUR
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SIHP100N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 30A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V |
auf Bestellung 3892 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP100N60E-GE3 | Vishay Semiconductors |
MOSFETs 650V Vds; 30V Vgs TO-220AB |
auf Bestellung 12946 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP100N60E-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
auf Bestellung 3892 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.46 EUR |
| 50+ | 3.36 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.8 EUR |
| SIHP100N60E-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 650V Vds; 30V Vgs TO-220AB
MOSFETs 650V Vds; 30V Vgs TO-220AB
auf Bestellung 12946 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 8.25 EUR |
| 10+ | 4.29 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.29 EUR |