SIHP105N60EF-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.34 EUR |
| 50+ | 4.61 EUR |
| 100+ | 4.20 EUR |
| 500+ | 3.85 EUR |
| 1000+ | 3.74 EUR |
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Technische Details SIHP105N60EF-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V.
Weitere Produktangebote SIHP105N60EF-GE3 nach Preis ab 4.33 EUR bis 8.03 EUR
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SIHP105N60EF-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs TO220 600V 29A N-CH MOSFET |
auf Bestellung 1902 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP105N60EF-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHP105N60EF-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 29 A, 0.088 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 208W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.088ohm |
auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHP105N60EF-GE3 | Hersteller : Vishay |
SIHP105N60EF-GE3 |
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| SIHP105N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W; TO220AB Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.102Ω Type of transistor: N-MOSFET Power dissipation: 208W Polarisation: unipolar Kind of package: tube Gate charge: 53nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 73A Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHP105N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W; TO220AB Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.102Ω Type of transistor: N-MOSFET Power dissipation: 208W Polarisation: unipolar Kind of package: tube Gate charge: 53nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 73A Mounting: THT Case: TO220AB |
Produkt ist nicht verfügbar |