auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.60 EUR |
| 10+ | 1.28 EUR |
| 100+ | 1.02 EUR |
| 1000+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHP10N40D-GE3 Vishay / Siliconix
Description: MOSFET N-CH 400V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V.
Weitere Produktangebote SIHP10N40D-GE3 nach Preis ab 1.33 EUR bis 3.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHP10N40D-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 400V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V |
auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
SIHP10N40D-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||
| SIHP10N40D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 23A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
| SIHP10N40D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 23A |
Produkt ist nicht verfügbar |