SIHP110N65SF-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
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Technische Details SIHP110N65SF-GE3 Vishay Siliconix
Description: N-CHANNEL 650V, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tj), Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V.
Weitere Produktangebote SIHP110N65SF-GE3 nach Preis ab 3.19 EUR bis 8.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SIHP110N65SF-GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 650V |
auf Bestellung 755 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP110N65SF-GE3 | Vishay Siliconix |
Description: N-CHANNEL 650V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tj) Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHP110N65SF-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 650V
MOSFETs N-CHANNEL 650V
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.48 EUR |
| 10+ | 5.59 EUR |
| 100+ | 3.96 EUR |
| 500+ | 3.42 EUR |
| 1000+ | 3.19 EUR |
| SIHP110N65SF-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tj)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.65 EUR |
| 10+ | 5.7 EUR |
| 100+ | 4.03 EUR |
| 500+ | 3.46 EUR |