auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.6 EUR |
| 10+ | 4.4 EUR |
| 100+ | 3.4 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.57 EUR |
| 2000+ | 2.43 EUR |
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Technische Details SIHP110N65SF-GE3 Vishay Semiconductors
Description: N-CHANNEL 650V, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tj), Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHP110N65SF-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 650V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tj) Rds On (Max) @ Id, Vgs: 115mOhm @ 17.5A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2772 pF @ 100 V |
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