SIHP11N80AEF-GE3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.04 EUR |
| 10+ | 5.01 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.89 EUR |
| 2000+ | 2.78 EUR |
| 5000+ | 2.76 EUR |
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Technische Details SIHP11N80AEF-GE3 Vishay / Siliconix
Description: N-CHANNEL 800V, Input Capacitance (Ciss) (Max) @ Vds: 776 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 78W (Tc), Rds On (Max) @ Id, Vgs: 483mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIHP11N80AEF-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SIHP11N80AEF-GE3 | Vishay Siliconix |
 Description: N-CHANNEL 800VInput Capacitance (Ciss) (Max) @ Vds: 776 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 483mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIHP11N80AEF-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Input Capacitance (Ciss) (Max) @ Vds: 776 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 483mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Description: N-CHANNEL 800V
Input Capacitance (Ciss) (Max) @ Vds: 776 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 483mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH