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SIHP15N50E-GE3

SIHP15N50E-GE3 VISHAY

sihp15n50e.pdf Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
33+2.22 EUR
37+1.94 EUR
50+1.44 EUR
Mindestbestellmenge: 26
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Technische Details SIHP15N50E-GE3 VISHAY

Description: MOSFET N-CH 500V 14.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V.

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SIHP15N50E-GE3 SIHP15N50E-GE3 Hersteller : Vishay Semiconductors sihp15n50e.pdf MOSFETs 500V Vds 30V Vgs TO-220AB
auf Bestellung 1279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.44 EUR
10+2.22 EUR
100+2.01 EUR
500+1.61 EUR
1000+1.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP15N50E-GE3 SIHP15N50E-GE3 Hersteller : Vishay Siliconix sihp15n50e.pdf Description: MOSFET N-CH 500V 14.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
auf Bestellung 11346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
50+2.36 EUR
100+2.12 EUR
500+1.72 EUR
1000+1.59 EUR
2000+1.48 EUR
5000+1.36 EUR
10000+1.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH