SIHP15N50E-GE3 VISHAY
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details SIHP15N50E-GE3 VISHAY
Description: VISHAY - SIHP15N50E-GE3 - Leistungs-MOSFET, n-Kanal, 500 V, 14.5 A, 0.243 ohm, TO-220AB, Durchsteckmontage, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 500, Dauer-Drainstrom Id: 14.5, Qualifikation: -, MSL: -, Verlustleistung Pd: 156, Gate-Source-Schwellenspannung, max.: 4, Verlustleistung: 156, Bauform - Transistor: TO-220AB, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3, Produktpalette: E, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.243, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.243, SVHC: Lead (19-Jan-2021).
Weitere Produktangebote SIHP15N50E-GE3 nach Preis ab 1.63 EUR bis 5.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SIHP15N50E-GE3 | Vishay Semiconductors |
MOSFETs 500V Vds 30V Vgs TO-220AB |
auf Bestellung 1259 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP15N50E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 14.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V |
auf Bestellung 11201 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP15N50E-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 500V Vds 30V Vgs TO-220AB
MOSFETs 500V Vds 30V Vgs TO-220AB
auf Bestellung 1259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.65 EUR |
| 10+ | 2.81 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.05 EUR |
| 1000+ | 1.87 EUR |
| 2000+ | 1.86 EUR |
| SIHP15N50E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
Description: MOSFET N-CH 500V 14.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
auf Bestellung 11201 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.76 EUR |
| 50+ | 2.86 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.92 EUR |
| 2000+ | 1.78 EUR |
| 5000+ | 1.64 EUR |
| 10000+ | 1.63 EUR |