auf Bestellung 997 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.69 EUR |
| 11+ | 4.78 EUR |
| 100+ | 4 EUR |
| 250+ | 3.85 EUR |
| 500+ | 3.38 EUR |
| 1000+ | 2.86 EUR |
| 2000+ | 2.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHP15N80AEF-GE3 Vishay
Description: EF SERIES POWER MOSFET WITH FAST, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V.
Weitere Produktangebote SIHP15N80AEF-GE3 nach Preis ab 2.71 EUR bis 6.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHP15N80AEF-GE3 | Hersteller : Vishay Siliconix |
 Description: EF SERIES POWER MOSFET WITH FASTPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V |
auf Bestellung 2211 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||
 |
SIHP15N80AEF-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHP15N80AEF-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 13 A, 0.305 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 156W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.305ohm |
auf Bestellung 973 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
 |
SIHP15N80AEF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 13A Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
SIHP15N80AEF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 13A Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
| SIHP15N80AEF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 13A Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
| SIHP15N80AEF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 28A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
| SIHP15N80AEF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 28A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |