SIHP21N80AEF-GE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SIHP21N80AEF-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 16.3 A, 0.25 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 16.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 179W
SVHC: Lead (07-Nov-2024)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: EF
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.25ohm
| Anzahl | Privatkunde |
|---|---|
| 36+ | 7.07 EUR |
| 54+ | 4.32 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.38 EUR |
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Technische Details SIHP21N80AEF-GE3 VISHAY
Description: VISHAY - SIHP21N80AEF-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 16.3 A, 0.25 ohm, TO-220AB, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 800V, rohsCompliant: YES, Dauer-Drainstrom Id: 16.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 179W, SVHC: Lead (07-Nov-2024), Bauform - Transistor: TO-220AB, Anzahl der Pins: 3Pin(s), Produktpalette: EF, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.25ohm.
Weitere Produktangebote SIHP21N80AEF-GE3 nach Preis ab 2.7 EUR bis 7.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SIHP21N80AEF-GE3 | Vishay / Siliconix |
MOSFETs TO220 800V 16.3A N-CH MOSFET |
auf Bestellung 690 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP21N80AEF-GE3 | Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP21N80AEF-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 16.3A N-CH MOSFET
MOSFETs TO220 800V 16.3A N-CH MOSFET
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.41 EUR |
| 10+ | 4.88 EUR |
| 100+ | 3.42 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.7 EUR |
| SIHP21N80AEF-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: E SERIES POWER MOSFET WITH FAST
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.69 EUR |
| 10+ | 5.03 EUR |
| 100+ | 3.53 EUR |
| 500+ | 2.89 EUR |