auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.80 EUR |
| 10+ | 4.07 EUR |
| 25+ | 3.84 EUR |
| 100+ | 3.27 EUR |
| 250+ | 3.10 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.48 EUR |
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Technische Details SIHP25N40D-E3 Vishay / Siliconix
Description: MOSFET N-CH 400V 25A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V.
Weitere Produktangebote SIHP25N40D-E3 nach Preis ab 2.91 EUR bis 5.30 EUR
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SIHP25N40D-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 400V 25A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V |
auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP25N40D-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 400V 25A 3-Pin(3+Tab) TO-220AB |
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