auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.39 EUR |
| 10+ | 2.82 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.27 EUR |
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Technische Details SIHP25N50E-BE3 Vishay / Siliconix
Description: N-CHANNEL 500V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V.
Weitere Produktangebote SIHP25N50E-BE3 nach Preis ab 2.22 EUR bis 5.49 EUR
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SIHP25N50E-BE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL 500VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V |
auf Bestellung 2932 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP25N50E-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 26A |
Produkt ist nicht verfügbar |
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| SIHP25N50E-BE3 | Hersteller : Vishay |
N Channel Trans MOSFET |
Produkt ist nicht verfügbar |
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| SIHP25N50E-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; Idm: 50A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Pulsed drain current: 50A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHP25N50E-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; Idm: 50A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Pulsed drain current: 50A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |