SIHP33N60EF-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.96 EUR |
50+ | 9.94 EUR |
100+ | 8.89 EUR |
500+ | 7.85 EUR |
1000+ | 7.06 EUR |
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Technische Details SIHP33N60EF-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V.
Weitere Produktangebote SIHP33N60EF-GE3 nach Preis ab 9.88 EUR bis 12.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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SIHP33N60EF-GE3 | Hersteller : Vishay / Siliconix | MOSFET 600V Vds 30V Vgs TO-220AB |
auf Bestellung 863 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP33N60EF-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP33N60EF-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SIHP33N60EF-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SIHP33N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 100A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 100A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 98mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHP33N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 100A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 100A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 98mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |