auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.05 EUR |
| 50+ | 6.39 EUR |
| 1000+ | 6.04 EUR |
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Technische Details SIHP33N60EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 33A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V.
Weitere Produktangebote SIHP33N60EF-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SIHP33N60EF-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 1050 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP33N60EF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SIHP33N60EF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SIHP33N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 100A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 100A Case: TO220AB On-state resistance: 98mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Power dissipation: 278W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHP33N60EF-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 33A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHP33N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 100A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 100A Case: TO220AB On-state resistance: 98mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Power dissipation: 278W |
Produkt ist nicht verfügbar |