SIHP5N50D-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 13+ | 1.43 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.94 EUR |
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Technische Details SIHP5N50D-GE3 Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V.
Weitere Produktangebote SIHP5N50D-GE3 nach Preis ab 0.73 EUR bis 2.85 EUR
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SIHP5N50D-GE3 | Vishay / Siliconix |
MOSFETs 500V Vds 30V Vgs TO-220AB |
auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP5N50D-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 500V Vds 30V Vgs TO-220AB
MOSFETs 500V Vds 30V Vgs TO-220AB
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.85 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.83 EUR |
| 2000+ | 0.75 EUR |
| 5000+ | 0.73 EUR |