SIHP5N80AE-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
auf Bestellung 1010 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.34 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.29 EUR |
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Technische Details SIHP5N80AE-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V.
Weitere Produktangebote SIHP5N80AE-GE3
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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SIHP5N80AE-GE3 | Hersteller : VISHAY |
 Description: VISHAY - SIHP5N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 4.4 A, 1.17 ohm, TO-220AB, DurchsteckmontagetariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 4.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 62.5W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.17ohm |
auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP5N80AE-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.4A Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP5N80AE-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 4.4A Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHP5N80AE-GE3 | Hersteller : Vishay | MOSFET N-CHANNEL 800V |
Produkt ist nicht verfügbar |