auf Bestellung 6457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.81 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.4 EUR |
| 2000+ | 1.37 EUR |
| 5000+ | 1.36 EUR |
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Technische Details SIHP7N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V.
Weitere Produktangebote SIHP7N60E-GE3 nach Preis ab 1.41 EUR bis 1.81 EUR
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SIHP7N60E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 7A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
auf Bestellung 1230 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP7N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SIHP7N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SIHP7N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |