SIHP7N60E-GE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SIHP7N60E-GE3 - Leistungs-MOSFET, n-Kanal, 600 V, 7 A, 0.5 ohm, TO-220AB, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600
Dauer-Drainstrom Id: 7
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 78
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3
Produktpalette: E
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.5
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2
SVHC: Lead (19-Jan-2021)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 4.34 EUR |
| 64+ | 3.67 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHP7N60E-GE3 VISHAY
Description: MOSFET N-CH 600V 7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V.
Weitere Produktangebote SIHP7N60E-GE3 nach Preis ab 1.76 EUR bis 5.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SIHP7N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 7A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP7N60E-GE3 | Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-220AB |
auf Bestellung 6382 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHP7N60E-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.55 EUR |
| 10+ | 3.59 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.84 EUR |
| SIHP7N60E-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220AB
MOSFETs 600V Vds 30V Vgs TO-220AB
auf Bestellung 6382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.59 EUR |
| 10+ | 3.61 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.87 EUR |
| 2000+ | 1.8 EUR |
| 5000+ | 1.76 EUR |