Technische Details SIHU2N80E-GE3 Vishay
Description: MOSFET N-CH 800V 2.8A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V.
Weitere Produktangebote SIHU2N80E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHU2N80E-GE3 | Hersteller : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: IPAK; TO251 Mounting: THT Kind of package: tube On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A Anzahl je Verpackung: 1 Stücke |
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SIHU2N80E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 2.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V |
Produkt ist nicht verfügbar |
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SIHU2N80E-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 800V Vds 30V Vgs IPAK (TO-251) |
Produkt ist nicht verfügbar |
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| SIHU2N80E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: IPAK; TO251 Mounting: THT Kind of package: tube On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A |
Produkt ist nicht verfügbar |