SIHU3N50D-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3A TO251
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Technische Details SIHU3N50D-GE3 Vishay Siliconix
Description: MOSFET N-CH 500V 3A TO251, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 69W (Tc), Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote SIHU3N50D-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SIHU3N50D-GE3 | Vishay Semiconductors |
MOSFETs 500V Vds 30V Vgs IPAK (TO-251) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHU3N50D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.9A Pulsed drain current: 5.5A Power dissipation: 69W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 3.2Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHU3N50D-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 500V Vds 30V Vgs IPAK (TO-251)
MOSFETs 500V Vds 30V Vgs IPAK (TO-251)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHU3N50D-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.9A
Pulsed drain current: 5.5A
Power dissipation: 69W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.9A
Pulsed drain current: 5.5A
Power dissipation: 69W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 3.2Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH