auf Bestellung 2986 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
24+ | 2.25 EUR |
34+ | 1.54 EUR |
100+ | 1.23 EUR |
500+ | 1.16 EUR |
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Technische Details SIHU5N80AE-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 4.4A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V.
Weitere Produktangebote SIHU5N80AE-GE3 nach Preis ab 1.21 EUR bis 2.73 EUR
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SIHU5N80AE-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 4.4A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V |
auf Bestellung 2991 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHU5N80AE-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 800V 4.4A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |