SIHW21N80AE-GE3 Vishay / Siliconix
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.76 EUR |
| 10+ | 5.70 EUR |
| 30+ | 4.82 EUR |
| 120+ | 4.66 EUR |
| 270+ | 4.35 EUR |
| 510+ | 3.84 EUR |
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Technische Details SIHW21N80AE-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 17.4A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V.
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SIHW21N80AE-GE3 | Hersteller : Vishay |
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SIHW21N80AE-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 17.4A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V |
Produkt ist nicht verfügbar |