SIHW21N80AE-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 8.43 EUR |
| 10+ | 5.88 EUR |
| 100+ | 4.91 EUR |
| 480+ | 4.21 EUR |
| 960+ | 3.84 EUR |
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Technische Details SIHW21N80AE-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 17.4A TO247AD, Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AD, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 32W (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SIHW21N80AE-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHW21N80AE-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 800V 17.4A TO247ADInput Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AD Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHW21N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 800V 17.4A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH