SIHW33N60E-GE3 Vishay Semiconductors
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.63 EUR |
| 10+ | 8.31 EUR |
| 480+ | 5.49 EUR |
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Technische Details SIHW33N60E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 33A TO247AD, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V.
Weitere Produktangebote SIHW33N60E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHW33N60E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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SIHW33N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 33A TO247AD Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V |
Produkt ist nicht verfügbar |