SIJ438ADP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 45.3A/169A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.3A (Ta), 169A(Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 20 V
Description: MOSFET N-CH 40V 45.3A/169A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.3A (Ta), 169A(Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 20 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.06 EUR |
6000+ | 1.01 EUR |
9000+ | 0.97 EUR |
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Technische Details SIJ438ADP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 45.3A/169A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.3A (Ta), 169A(Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 69.4W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 20 V.
Weitere Produktangebote SIJ438ADP-T1-GE3 nach Preis ab 1.13 EUR bis 2.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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SIJ438ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 45.3A/169A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.3A (Ta), 169A(Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 69.4W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 20 V |
auf Bestellung 12772 Stücke: Lieferzeit 10-14 Tag (e) |
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SIJ438ADP-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L |
auf Bestellung 5995 Stücke: Lieferzeit 14-28 Tag (e) |
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SIJ438ADP-T1-GE3 | Hersteller : Vishay | N-Channel 40-V (D-S) MOSFET PowerPAK SO-8L 650M SG 2 mil , 1.35 mΩ @ 10V mΩ @ 7.5V 1.75 mΩ @ 4.5V |
Produkt ist nicht verfügbar |
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SIJ438ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 169A On-state resistance: 1.75mΩ Type of transistor: N-MOSFET Power dissipation: 69.4W Polarisation: unipolar Gate charge: 162nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 300A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIJ438ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 169A On-state resistance: 1.75mΩ Type of transistor: N-MOSFET Power dissipation: 69.4W Polarisation: unipolar Gate charge: 162nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 300A |
Produkt ist nicht verfügbar |