SIJ4819DP-T1-GE3 Vishay / Siliconix
Hersteller: Vishay / Siliconix
MOSFET P-Channel 80-V (D-S) MOSFET PowerPAK SO-8L, 20.7 mohm a. 10V, 29.6 mohm a. 4.5V
MOSFET P-Channel 80-V (D-S) MOSFET PowerPAK SO-8L, 20.7 mohm a. 10V, 29.6 mohm a. 4.5V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.41 EUR |
| 250+ | 2.22 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.72 EUR |
| 3000+ | 1.58 EUR |
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Technische Details SIJ4819DP-T1-GE3 Vishay / Siliconix
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -62A; Idm: -145A, Kind of channel: enhancement, Mounting: SMD, Technology: TrenchFET®, Case: PowerPAK® SO8, Type of transistor: P-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Pulsed drain current: -145A, Drain-source voltage: -80V, Drain current: -62A, Gate-source voltage: ±20V, Gate charge: 69nC, On-state resistance: 38mΩ, Power dissipation: 145W, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SIJ4819DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIJ4819DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -62A; Idm: -145A Kind of channel: enhancement Mounting: SMD Technology: TrenchFET® Case: PowerPAK® SO8 Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -145A Drain-source voltage: -80V Drain current: -62A Gate-source voltage: ±20V Gate charge: 69nC On-state resistance: 38mΩ Power dissipation: 145W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| SIJ4819DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -62A; Idm: -145A Kind of channel: enhancement Mounting: SMD Technology: TrenchFET® Case: PowerPAK® SO8 Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -145A Drain-source voltage: -80V Drain current: -62A Gate-source voltage: ±20V Gate charge: 69nC On-state resistance: 38mΩ Power dissipation: 145W |
Produkt ist nicht verfügbar |