| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.88 EUR |
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Technische Details SIJA22DP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 25V 64A/201A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Ta), 201A (Tc), Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V, Power Dissipation (Max): 4.8W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V.
Weitere Produktangebote SIJA22DP-T1-GE3 nach Preis ab 1.24 EUR bis 2.38 EUR
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SIJA22DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 25V 64A/201A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Ta), 201A (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V Power Dissipation (Max): 4.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V |
auf Bestellung 243 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIJA22DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 64A/201A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
Description: MOSFET N-CH 25V 64A/201A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta), 201A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 15 V
auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 11+ | 1.6 EUR |
| 100+ | 1.24 EUR |