SIJA52DP-T1-GE3 Vishay Semiconductors
auf Bestellung 6000 Stücke:
Lieferzeit 872-876 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIJA52DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V.
Weitere Produktangebote SIJA52DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SIJA52DP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 60A 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
|
 |
SIJA52DP-T1-GE3 | Hersteller : Vishay |
SIJA52DP-T1-GE3 Vishay MOSFETs Transistor N-CH 40V 60A 5-Pin(4+Tab) PowerPAK SO T/R - Arrow.com |
Produkt ist nicht verfügbar |
|
 |
SIJA52DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V |
Produkt ist nicht verfügbar |
|
|
|
SIJA52DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V |
Produkt ist nicht verfügbar |