SIJA52DP-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.9 EUR |
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Technische Details SIJA52DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8.
Weitere Produktangebote SIJA52DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SIJA52DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 60A PPAK SO-8Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIJA52DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIJA52DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIJA52DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 15A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH