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SIJH5700E-T1-GE3

SIJH5700E-T1-GE3 Vishay Semiconductors

sijh5700e.pdf Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 150 V MOSFET PWRPAK
auf Bestellung 5460 Stücke:
Lieferzeit 800-804 Tag (e)
Anzahl Preis
1+10.28 EUR
10+8.62 EUR
25+8.15 EUR
100+6.99 EUR
250+6.60 EUR
500+6.20 EUR
1000+5.32 EUR
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Technische Details SIJH5700E-T1-GE3 Vishay Semiconductors

Description: N-CHANNEL 150 V (D-S) 175C MOSFE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 174A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 75 V.

Weitere Produktangebote SIJH5700E-T1-GE3 nach Preis ab 4.77 EUR bis 11.02 EUR

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Preis
SIJH5700E-T1-GE3 SIJH5700E-T1-GE3 Hersteller : Vishay Siliconix sijh5700e.pdf Description: N-CHANNEL 150 V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 75 V
auf Bestellung 1862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.02 EUR
10+7.81 EUR
100+5.69 EUR
500+4.78 EUR
1000+4.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIJH5700E-T1-GE3 Hersteller : Vishay sijh5700e.pdf Trans MOSFET N-CH 150V 17A T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIJH5700E-T1-GE3 SIJH5700E-T1-GE3 Hersteller : Vishay Siliconix sijh5700e.pdf Description: N-CHANNEL 150 V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH