SIJH800E-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 4.06 EUR |
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Technische Details SIJH800E-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.3W (Ta), 333W (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIJH800E-T1-GE3 nach Preis ab 3.71 EUR bis 10.75 EUR
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SIJH800E-T1-GE3 | Vishay Semiconductors |
MOSFETs POWRPK N CHAN 80V |
auf Bestellung 4334 Stücke: Lieferzeit 10-14 Tag (e) |
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SIJH800E-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V |
auf Bestellung 3215 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIJH800E-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs POWRPK N CHAN 80V
MOSFETs POWRPK N CHAN 80V
auf Bestellung 4334 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 8.36 EUR |
| 10+ | 6.2 EUR |
| 25+ | 6.12 EUR |
| 100+ | 4.58 EUR |
| 500+ | 4.14 EUR |
| 1000+ | 3.71 EUR |
| SIJH800E-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V
Description: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V
auf Bestellung 3215 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.75 EUR |
| 10+ | 7.24 EUR |
| 100+ | 5.26 EUR |
| 500+ | 4.97 EUR |