SIJH800E-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: N-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V
auf Bestellung 2336 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 11.18 EUR |
| 10+ | 9.39 EUR |
| 100+ | 7.59 EUR |
| 500+ | 6.75 EUR |
| 1000+ | 5.78 EUR |
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Technische Details SIJH800E-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V.
Weitere Produktangebote SIJH800E-T1-GE3 nach Preis ab 5.82 EUR bis 11.26 EUR
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SIJH800E-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CHANNEL 80-V (D-S) |
auf Bestellung 4581 Stücke: Lieferzeit 14-28 Tag (e) |
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SIJH800E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 29A 5-Pin(4+Tab) PowerPAK T/R |
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SIJH800E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 29A 5-Pin(4+Tab) PowerPAK T/R |
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| SIJH800E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 299A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 299A Pulsed drain current: 350A Power dissipation: 333W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 0.21µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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SIJH800E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V |
Produkt ist nicht verfügbar |
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| SIJH800E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 299A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 299A Pulsed drain current: 350A Power dissipation: 333W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 0.21µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |