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SIJK140E-T1-GE3

SIJK140E-T1-GE3 Vishay Siliconix

sijk140e.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175 C MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta), 795A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18510 pF @ 20 V
auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.19 EUR
10+7.82 EUR
25+7.22 EUR
100+6.57 EUR
250+6.26 EUR
500+6.07 EUR
Mindestbestellmenge: 2
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Technische Details SIJK140E-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 40 V (D-S) 175 C MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Ta), 795A (Tc), Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V, Power Dissipation (Max): 17W (Ta), 536W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18510 pF @ 20 V.

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SIJK140E-T1-GE3 SIJK140E-T1-GE3 Hersteller : Vishay / Siliconix sijk140e.pdf MOSFETs N-CHANNEL 40-V (D-S) MOSFET
auf Bestellung 777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.65 EUR
10+8.69 EUR
100+7.23 EUR
500+6.53 EUR
1500+6.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIJK140E-T1-GE3 SIJK140E-T1-GE3 Hersteller : Vishay Siliconix sijk140e.pdf Description: N-CHANNEL 40 V (D-S) 175 C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Ta), 795A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18510 pF @ 20 V
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Im Einkaufswagen  Stück im Wert von  UAH